Broad Diversity of Near-Infrared Single-Photon Emitters in Silicon
نویسندگان
چکیده
We report the detection of individual emitters in silicon belonging to seven different families optically-active point defects. These fluorescent centers are created by carbon implantation a commercial silicon-on-insulator wafer usually employed for integrated photonics. Single photon emission is demonstrated over [1.1,1.55]-$\mu$m range, spanning O- and C-telecom bands. analyse their photoluminescence spectrum, dipolar optical relaxation dynamics at 10K. For specific family, we show constant intensity saturation from 10K temperatures well above 77K-liquid nitrogen temperature. Given advanced control nanofabrication integration silicon, these novel artificial atoms promising candidates Si-based quantum technologies.
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ژورنال
عنوان ژورنال: Physical Review Letters
سال: 2021
ISSN: ['1079-7114', '0031-9007', '1092-0145']
DOI: https://doi.org/10.1103/physrevlett.126.083602